GaSb and InAs: New Materials for Metal-Semiconductor Point-Contact Diodes

  • G. Carelli
  • A. De Michele
  • M. Finotti
  • K. Bousbahi
  • N. Ioli
  • A. Moretti
Article

DOI: 10.1023/A:1023317211057

Cite this article as:
Carelli, G., De Michele, A., Finotti, M. et al. International Journal of Infrared and Millimeter Waves (2003) 24: 799. doi:10.1023/A:1023317211057
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Abstract

Metal-semiconductor point contact diodes have proved to be good detectors and mixers for radiation from the far-infrared to visible. Until now GaAs, InSb and InP are the most studied and used semiconductor materials for these devices. In this work we present the performance in the visible and infrared region for metal-semiconductor point-contact diodes with GaSb or InAs as the semiconductor layers. These two new materials have shown good characteristics.

semiconductors detectors mixers point-contact diode 

Copyright information

© Plenum Publishing Corporation 2003

Authors and Affiliations

  • G. Carelli
    • 1
  • A. De Michele
    • 1
  • M. Finotti
    • 1
  • K. Bousbahi
    • 1
  • N. Ioli
    • 2
  • A. Moretti
    • 2
  1. 1.Dipartimento di Fisica andINFMPisaItalia
  2. 2.Dipartimento di Fisica and INFMIPCF-CNRItalia

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