Lin, G. & Lee, C. Optical and Quantum Electronics (2002) 34: 1191. doi:10.1023/A:1021386822847
The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.
band offset ratioband structurematerial gain1300-nm bandquaternary material system