Optical and Quantum Electronics

, Volume 34, Issue 12, pp 1191–1200

Comparison of 1300 nm quantum well lasers using different material systems

Authors

  • G. Lin
    • Department of Electronics EngineeringNational Chiao Tung University
  • C.P. Lee
    • Department of Electronics EngineeringNational Chiao Tung University
Article

DOI: 10.1023/A:1021386822847

Cite this article as:
Lin, G. & Lee, C. Optical and Quantum Electronics (2002) 34: 1191. doi:10.1023/A:1021386822847

Abstract

The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP material systems. The material compositions for each system are carefully chosen for comparison. The calculated results show that the peak gain is around the same in spite of the difference in band structures for the three systems.

band offset ratio band structure material gain 1300-nm band quaternary material system

Copyright information

© Kluwer Academic Publishers 2002