Optical and Quantum Electronics

, Volume 34, Issue 12, pp 1151–1166

Er-doped silica-based waveguides prepared by different techniques: RF-sputtering, sol-gel and ion-exchange

  • G.C. Righini
  • S. Pelli
  • M. Ferrari
  • C. Armellini
  • L. Zampedri
  • C. Tosello
  • S. Ronchin
  • R. Rolli
  • E. Moser
  • M. Montagna
  • A. Chiasera
  • S.J.L. Ribeiro
Article

DOI: 10.1023/A:1021338906917

Cite this article as:
Righini, G., Pelli, S., Ferrari, M. et al. Optical and Quantum Electronics (2002) 34: 1151. doi:10.1023/A:1021338906917

Abstract

Erbium-activated silica-based planar waveguides were prepared by three different technological routes: RF-sputtering, sol–gel and ion exchange. Various parameters of preparation were varied in order to optimize the waveguides for operation in the NIR region. Particular attention was devoted to the minimization of the losses and the increase of the luminescence efficiency of the metastable 4I13/2 state of the Er3+ ion. Waveguide properties were determined by m-line spectroscopy and loss measurements. Waveguide Raman and luminescence spectroscopy were used to obtain information about the structure of␣the prepared films and about the dynamical processes related to the luminescence of the Er3+ ions.

dip-coating erbium ion-exchange luminescence spectroscopy optical amplification optical waveguides Raman spectroscopy RF-sputtering silicate glasses upconversion 

Copyright information

© Kluwer Academic Publishers 2002

Authors and Affiliations

  • G.C. Righini
    • 1
  • S. Pelli
    • 1
  • M. Ferrari
    • 2
  • C. Armellini
    • 2
  • L. Zampedri
    • 3
  • C. Tosello
    • 3
  • S. Ronchin
    • 3
  • R. Rolli
    • 3
  • E. Moser
    • 3
  • M. Montagna
    • 3
  • A. Chiasera
    • 3
  • S.J.L. Ribeiro
    • 4
  1. 1.Optoelectronics and Photonics Department, IROE-CNRFirenzeItaly
  2. 2.CNR-CeFSA, Centro Fisica Stati AggregatiPovo-TrentoItaly
  3. 3.Dipartimento di Fisica and INFMUniversità di TrentoPovo-TrentoItaly
  4. 4.Instituto de Quimica, UNESPArraquaraBrazil