Journal of Sol-Gel Science and Technology

, Volume 8, Issue 1, pp 465–469

Staged Development of Modified Silicon Dioxide Films

  • Barry Arkles
  • Donald H. Berry
  • Lisa K. Figge
  • Russell J. Composto
  • Terry Chiou
  • Hydee Colazzo
  • William E. Wallace
Article

DOI: 10.1023/A:1018333823471

Cite this article as:
Arkles, B., Berry, D.H., Figge, L.K. et al. Journal of Sol-Gel Science and Technology (1997) 8: 465. doi:10.1023/A:1018333823471
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Abstract

The hydrolytic generation of SiO2 films from chlorosilanes or alkoxysilanes is interrupted by incorporating labile organic groups which stop SiO2 formation at a processable prepolymer stage. The monomers for the prepolymer have electron withdrawing substituents in the β -position. The organic groups are removed from the prepolymer at low temperature, extruding ethylene. The formation of SiO2 proceeds by intramolecular condensation of the electronegative substituents which are now in a hydrolytically unstable bond with silicon and hydroxyl groups or ambient moisture. Films of the prepolymer spun onto silicon wafers are converted into uniform SiO2-rich films at temperatures between 150–400°C.

β-chloroethylsilsesquioxane β-chloroethyltrichlorosilane spin-on glass thermal conversion dielectric films silicon dioxide 

Copyright information

© Kluwer Academic Publishers 1997

Authors and Affiliations

  • Barry Arkles
  • Donald H. Berry
  • Lisa K. Figge
  • Russell J. Composto
  • Terry Chiou
  • Hydee Colazzo
  • William E. Wallace

There are no affiliations available