Article

Inorganic Materials

, Volume 37, Issue 7, pp 662-668

First online:

Thermoelectric Properties of nGeTe · mSb2Te3Layered Compounds

  • P. P. KonstantinovAffiliated withIoffe Physicotechnical Institute, Russian Academy of Sciences
  • , L. E. ShelimovaAffiliated withBaikov Institute of Metallurgy and Materials Research, Russian Academy of Sciences
  • , E. S. AvilovAffiliated withBaikov Institute of Metallurgy and Materials Research, Russian Academy of Sciences
  • , M. A. KretovaAffiliated withBaikov Institute of Metallurgy and Materials Research, Russian Academy of Sciences
  • , V. S. ZemskovAffiliated withBaikov Institute of Metallurgy and Materials Research, Russian Academy of Sciences

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Abstract

The Hall coefficient, electrical conductivity, and thermoelectric power of Ge3Sb2Te6, Ge2Sb2Te5, GeSb2Te4 , and GeSb4Te7were measured over a wide temperature range (R Hand σ from 77 to 800 K and Sfrom 90 to 450 K). The carrier concentration was varied via compositional changes within the homogeneity regions of the compounds. All of the materials studied were found to be p-type. Some of the alloys have a low lattice thermal conductivity and are, therefore, candidate p-type thermoelectric materials. The temperature-dependent hole mobility data suggest that both acoustic phonons and point defects contribute to the scattering of charge carriers at low temperatures.