Journal of Materials Science

, Volume 33, Issue 11, pp 2825–2830

Spatial--OH impurity distribution in gallium phosphate crystals

Article

DOI: 10.1023/A:1017581718908

Cite this article as:
Marinho, E., Palmier, D., Goiffon, A. et al. Journal of Materials Science (1998) 33: 2825. doi:10.1023/A:1017581718908

Abstract

Piezoelectric properties of quartz and quartz-like materials are strongly related to the impurity content in the crystals and, more especially, to their hydroxyl group (−OH) content. This work has been devoted to the determination of the spatial distribution of this impurity in as-grown crystals of gallium phosphate, GaPO4. The investigation was undertaken by infrared spectroscopy from eight samples with different growth conditions and completed by thermally stimulated current/relaxation map analysis techniques. The results allow the best growth parameters to be defined, leading to crystals with the lowest −OH impurity content.

Copyright information

© Kluwer Academic Publishers 1998

Authors and Affiliations

  • E. Marinho
    • 1
  • D. Palmier
    • 1
  • A. Goiffon
    • 1
  • E. Philippot
    • 1
  1. 1.Laboratoire de Physicochimie de la Matière CondenséeUniversité de Montpellier IIMontpellier cedex 5France

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