Inorganic Materials

, Volume 37, Issue 5, pp 445–448

Cathodoluminescence of Cd4SiS6 , Cd4SiSe6 , and Si-Doped CdS, CdSe, and CdTe Crystals


  • I. N. Odin
    • Moscow State University
  • M. V. Chukichev
    • Moscow State University
  • V. A. Ivanov
    • Moscow State University
  • M. E. Rubina
    • Moscow State University

DOI: 10.1023/A:1017560313477

Cite this article as:
Odin, I.N., Chukichev, M.V., Ivanov, V.A. et al. Inorganic Materials (2001) 37: 445. doi:10.1023/A:1017560313477


CdS, CdSe, and CdTe single crystals were vapor-phase-doped with the corresponding silicon chalcogenides under nearly equilibrium conditions. Cathodoluminescence studies revealed that the Si dopant produced new luminescence centers in the crystals. The cathodoluminescence spectra of Cd4SiS6and Cd4SiSe6crystals were measured. Metastable, sphalerite CdS〈Si〉 and CdSe〈Si〉 films were grown under highly nonequilibrium conditions. The maximum of edge emission in their spectra was redshifted as compared to the stable materials. The CdS〈Si〉 and CdSe〈Si〉 crystals were shown to be photosensitive.

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© MAIK “Nauka/Interperiodica” 2001