The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films
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In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = P H2/P MTS = Q H2/Q MTS) on the growth behavior using MTS (metyltrichlorosilane, CH3SiCly3) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3–10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1–2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.
- J. A. Tomonovich, Solid State Technology 40 (1997) 135.
- I. N. Frantsevich, “Theoretical and Practical Aspects of Silicon Carbide in Silicon Carbide” (Consultants Bureau, NewYork, 1970) p. 1.
- D. J. Cheng, W. J. Shyy, D. H. Kuo and M. H. Hon, J. Electrochem. Soc. 134 (1987) 3145.
- F. Loumagne, F. Langlais, R. Naslain, S. Schamm, D. Dorignac and F. Sevely, Thin Solid Films 254 (1995) 75.
- Y. K. Park, K. S. Seo, S. W. Park and S. C. Choi, in Proceedings of Fifth International Conference on Composites Eng., 5–11 July 1998, Las Vegas, 1998, p. 713.
- S. Nishino, Y. Hazuki, H. Matsunami and T. Tanaka, J. Electrochem. Soc. 127 (1980) 2674.
- S. Nishino, J. A. Powell and H. A. Will, Appl. Phys. Lett. 42 (1984) 460.
- H. O. Pierson, “Handbook of Chemical Vapor Deposition: Principles,Technology and Applications” (Noyes Publications, Park Ridge, 1992) p. 42.
- J. Chin, P. K. Gantzel and R. G. Hudson, Thin Solid Films 40 (1977) 57.
- M. G. So and J. S. Chun, J. Vac. Sci. Technol. A6 (1988) 5.
- T. T. Lin and M. H. Hon, J. Mater. Sci. 30 (1995) 2675.
- M. W. Russell, J. A. Freltas Jr., W. J. Moore and J. E. Butler, Advanced Materials for Optics and Electronics 7 (1997) 195.
- T. E. Hale, “Ceramic Films and Coatings” (Noyes Publications, Park Ridge, 1992) p. 33.
- D. J. Kim, D. J. Choi and Y. W. Kim, Thin Solid Films 266 (1995) 192.
- D. J. Kim and D. J. Choi, J. Mat. Sci. Lett. 16 (1997) 286.
- H. S. Kim and D. J. Choi, J. Amer. Ceram. Soc. 82 (1999) 331.
- B. J. Choi and D. R. Kim, J. Mater. Sci. Lett. 10 (1991) 860.
- B. J. Choi, D. W. Park and D. R. Kim, ibid. 16 (1997) 33.
- J. O. Carlsson, Thin Solid Fims 130 (1985) 261.
- F. Loumagne, F. Langlais and R. Naslain, J. Cryst. Growth 155 (1995) 198.
- C. Barret and T. B. Massalski, “Structure of Metals” (Pergamon Press, 1980) p. 204.
- The effect of input gas ratio on the growth behavior of chemical vapor deposited SiC films
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Volume 36, Issue 7 , pp 1695-1700
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