Journal of Materials Science

, Volume 37, Issue 11, pp 2259–2261

Quantum confinement effect in SiO2 films containing Ge microcrystallites

Authors

  • N. Y. Tang
    • Department of PhysicsSuzhou University
  • X. M. Wu
    • Department of PhysicsSuzhou University
  • L. J. Zhuge
    • Department of PhysicsSuzhou University
  • C. N. Ye
    • Department of PhysicsSuzhou University
  • W. G. Yao
    • Department of PhysicsSuzhou University
  • J. Chen
    • Ion Beam Lab., Shanghai Institute of MetallurgyAcademia Sinica
  • Y. M. Dong
    • Ion Beam Lab., Shanghai Institute of MetallurgyAcademia Sinica
  • Y. H. Yu
    • Ion Beam Lab., Shanghai Institute of MetallurgyAcademia Sinica
Article

DOI: 10.1023/A:1015365232293

Cite this article as:
Tang, N.Y., Wu, X.M., Zhuge, L.J. et al. Journal of Materials Science (2002) 37: 2259. doi:10.1023/A:1015365232293

Abstract

SiO2 thin films embedded with Ge microcrystallites (Ge-SiO2 films) were prepared by RF-magnetron co-sputtering method from a composite target of Ge and SiO2. The average size of Ge crystallites can be modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-SiO2 films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

Copyright information

© Kluwer Academic Publishers 2002