Quantum confinement effect in SiO2 films containing Ge microcrystallites
- Cite this article as:
- Tang, N.Y., Wu, X.M., Zhuge, L.J. et al. Journal of Materials Science (2002) 37: 2259. doi:10.1023/A:1015365232293
SiO2 thin films embedded with Ge microcrystallites (Ge-SiO2 films) were prepared by RF-magnetron co-sputtering method from a composite target of Ge and SiO2. The average size of Ge crystallites can be modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-SiO2 films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.