Article

Journal of Materials Science

, Volume 37, Issue 11, pp 2259-2261

First online:

Quantum confinement effect in SiO2 films containing Ge microcrystallites

  • N. Y. TangAffiliated withDepartment of Physics, Suzhou University
  • , X. M. WuAffiliated withDepartment of Physics, Suzhou University
  • , L. J. ZhugeAffiliated withDepartment of Physics, Suzhou University
  • , C. N. YeAffiliated withDepartment of Physics, Suzhou University
  • , W. G. YaoAffiliated withDepartment of Physics, Suzhou University
  • , J. ChenAffiliated withIon Beam Lab., Shanghai Institute of Metallurgy, Academia Sinica
  • , Y. M. DongAffiliated withIon Beam Lab., Shanghai Institute of Metallurgy, Academia Sinica
  • , Y. H. YuAffiliated withIon Beam Lab., Shanghai Institute of Metallurgy, Academia Sinica

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

SiO2 thin films embedded with Ge microcrystallites (Ge-SiO2 films) were prepared by RF-magnetron co-sputtering method from a composite target of Ge and SiO2. The average size of Ge crystallites can be modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-SiO2 films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.