International Journal of Thermophysics

, Volume 22, Issue 5, pp 1593–1611

Emissivity Measurements and Modeling of Silicon-Related Materials: An Overview

  • N. M. Ravindra
  • B. Sopori
  • O. H. Gokce
  • S. X. Cheng
  • A. Shenoy
  • L. Jin
  • S. Abedrabbo
  • W. Chen
  • Y. Zhang
Article

DOI: 10.1023/A:1012869710173

Cite this article as:
Ravindra, N.M., Sopori, B., Gokce, O.H. et al. International Journal of Thermophysics (2001) 22: 1593. doi:10.1023/A:1012869710173

Abstract

An overview of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed.

coatingsconcentrationdoping concentrationemissivitysiliconsurface roughnesstemperaturewavelength

Copyright information

© Plenum Publishing Corporation 2001

Authors and Affiliations

  • N. M. Ravindra
    • 1
  • B. Sopori
    • 2
  • O. H. Gokce
    • 1
  • S. X. Cheng
    • 1
  • A. Shenoy
    • 1
  • L. Jin
    • 1
  • S. Abedrabbo
    • 1
    • 3
  • W. Chen
    • 1
    • 2
    • 4
  • Y. Zhang
    • 1
    • 2
  1. 1.New Jersey Institute of TechnologyDepartment of PhysicsNewarkU.S.A.
  2. 2.National Renewable Energy LaboratoryGoldenU.S.A
  3. 3.JDS Uniphase CorporationFreeholdU.S.A
  4. 4.BTA TechnologySan JoseU.S.A