Journal of Porous Materials

, Volume 7, Issue 1, pp 173–176

The Energy-Band Structure of Porous Silicon Studied with Photoluminescence Excitation and Photoacoustic Spectroscopy

Authors

  • R.C. Egeberg
    • Oersted Laboratory, Niels Bohr InstituteUniversitetsparken 5
  • E. Veje
    • Oersted Laboratory, Niels Bohr InstituteUniversitetsparken 5
  • A. Ferreira Da Silva
    • Instituto Nacional de Pesquisas EspaciaisINPE/LAS
  • I. Pepe
    • Instituto de FisicaUniversidade Federal da Bahia
  • A. Santos Alves
    • Instituto de FisicaUniversidade Federal da Bahia
Article

DOI: 10.1023/A:1009674401781

Cite this article as:
Egeberg, R., Veje, E., Da Silva, A.F. et al. Journal of Porous Materials (2000) 7: 173. doi:10.1023/A:1009674401781

Abstract

Porous silicon has been studied with photoluminescence, photoluminescence excitation, and photoacoustic spectroscopy. From the luminescence data, an energy-level diagram related to the luminescence is constructed. The diagram is confirmed in detail by the photoacoustic spectra. The results are discussed with the conclusion that they are in good agreement with the surface-band oxyhydride-like emitter, which recently has been established as the source for the photoluminescence from porous silicon.

porous siliconphotoacoustic spectroscopyenergy band
Download to read the full article text

Copyright information

© Kluwer Academic Publishers 2000