Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells
- Cite this article as:
- Dharmadasa, I.M., Samantilleke, A.P., Young, J. et al. Journal of Materials Science: Materials in Electronics (1999) 10: 441. doi:10.1023/A:1008922229057
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Zinc selenide layers have been grown on glass/conducting glass substrates using a low temperature (∼65°C) electrochemical technique, and characterized using X-ray diffractions (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and photo electrochemical cell (PEC) techniques. XRD shows that the material growth is highly preferential with (1 1 1) orientation. XPS work indicates that this material has a chemical and stoichiometric nature similar to that grown by molecular beam epitaxy. Annealing at ∼250°C for 15 min improves the crystallinity of the layers. PL studies indicate the presence of a low number of defect levels which causes radiative transitions within the energy region 0.7–1.4 eV below the conduction band, in the case of electrodeposited ZnSe when compared to MBE grown ZnSe. Optical properties of the thin films were characterized using a PEC cell arrangement and both n- and p-doping of the materials has been achieved successfully using Ga and As, respectively. The use of crystalline ZnSe layers in both simple p-n junctions and multi-layer solar cell structures shows encouraging results.