Article

Journal of Materials Science: Materials in Electronics

, Volume 9, Issue 3, pp 231-235

Growth of n-type and p-type ZnSe thin films using an electrochemical technique for applications in large area optoelectronic devices

  • A. P SamantillekeAffiliated withMaterials Research Institute / Division of Applied Physics, Sheffield Hallam University
  • , M. H BoyleAffiliated withMaterials Research Institute / Division of Applied Physics, Sheffield Hallam University
  • , J YoungAffiliated withMaterials Research Institute / Division of Applied Physics, Sheffield Hallam University
  • , I. M DharmadasaAffiliated withMaterials Research Institute / Division of Applied Physics, Sheffield Hallam University

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

ZnSe layers have been grown by a low temperature (∼65 °C) electrochemical deposition technique in an aqueous medium. The resulting thin films have been characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive analysis by X-rays (EDAX), glow discharge optical emission spectroscopy (GDOES) and X-ray fluorescence (XRF) for bulk material properties. A photo-electrochemical (PEC) cell and an optical absorption method have been used for determination of the electrical and optical properties of the thin films. XRD patterns indicate the growth of ZnSe layers with (1 1 1) as the preferred orientation. The XPS spectra are similar to those of commercially available ZnSe and the EDAX, GDOES and XRF also indicate the presence of Zn and Se in the layers. PEC studies show p-type semiconducting properties for the as deposited layers and n-type ZnSe can be produced by appropriate doping. Optical absorption is maximum around 460 nm indicating a band gap of 2.7 eV. Annealing at 200 °C for 15 mins improves both the crystallinity of the layers and the photoresponse of the electrolyte/ZnSe liquid/solid Schottky junction. © 1998 Chapman & Hall