Electrodeposition of n-type and p-type ZnSe thin films for applications in large area optoelectronic devices

  • A. P. Samantilleke
  • M. H. Boyle
  • J. Young
  • I. M. Dharmadasa
Article

DOI: 10.1023/A:1008876722944

Cite this article as:
Samantilleke, A.P., Boyle, M.H., Young, J. et al. Journal of Materials Science: Materials in Electronics (1998) 9: 289. doi:10.1023/A:1008876722944

Abstract

ZnSe layers have been grown by a low temperature (∼65 °C) electrochemical deposition technique in an aqueous medium. The resulting thin films have been characterized using X-ray diffraction (XRD) and a photoelectrochemical (PEC) cell for determination of the bulk properties and electrical conductivity type. XRD patterns indicate the growth of ZnSe layers with (1 1 1) as the preferred orientation. PEC studies show p-type semiconducting properties for the as deposited layers and n-type ZnSe can be produced by appropriate doping. Annealing at 250 °C for 15 min improves the crystallinity of the layers and the photoresponse of the ZnSe/electrolyte junction. © 1998 Kluwer Academic Publishers

Copyright information

© Kluwer Academic Publishers 1998

Authors and Affiliations

  • A. P. Samantilleke
    • 1
  • M. H. Boyle
    • 1
  • J. Young
    • 1
  • I. M. Dharmadasa
    • 1
  1. 1.Materials Research Institute/Division of Applied PhysicsSheffield Hallam UniversitySheffieldUK E-mail