Optical and Quantum Electronics

, Volume 32, Issue 3, pp 327–337

Low loss niobium oxides film deposited by ion beam sputter deposition

  • Cheng-Chung Lee
  • Jin-Cherng Hsu
  • Daw-Heng Wong
Article

DOI: 10.1023/A:1007050204074

Cite this article as:
Lee, CC., Hsu, JC. & Wong, DH. Optical and Quantum Electronics (2000) 32: 327. doi:10.1023/A:1007050204074
  • 97 Downloads

Abstract

Thin films of niobium oxides are deposited by ion beam sputtering with a Kaufman-type ion source. The deposition rate is function of the oxygen partial pressure. There is an optimum oxygen pressure at 7 × 10−5 Torr to deposite a stoichiometric film. The as-deposited films are amorphous. The optical parameters, including refractive index, extinction coefficient, and homogeneity, of the oxide films are influenced by post-baking temperature. The surface morphology measured by an atomic force microscope (AFM) shows that there is a certain range of optimum baking temperature which yields a smooth film and a good optical quality.

deposition ratehomogeneityion beam sputteringoxygen partial pressuresurface roughness

Copyright information

© Kluwer Academic Publishers 2000

Authors and Affiliations

  • Cheng-Chung Lee
    • 1
  • Jin-Cherng Hsu
    • 1
  • Daw-Heng Wong
    • 1
  1. 1.Institute of Optical SciencesNational Central UniversityChung-LiTaiwan, ROC