Optical and Quantum Electronics

, Volume 31, Issue 12, pp 1235–1246

Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum

Authors

  • Zhong-zhe Sun
    • Laboratory of Semiconductor Materials Science, Institute of SemiconductorsChinese Academy of Sciences
  • Ding Ding
    • Laboratory of Semiconductor Materials Science, Institute of SemiconductorsChinese Academy of Sciences
  • Qian Gong
    • Laboratory of Semiconductor Materials Science, Institute of SemiconductorsChinese Academy of Sciences
  • Wei Zhou
    • Laboratory of Semiconductor Materials Science, Institute of SemiconductorsChinese Academy of Sciences
  • Bo Xu
    • Laboratory of Semiconductor Materials Science, Institute of SemiconductorsChinese Academy of Sciences
  • Zhan-Guo Wang
    • Laboratory of Semiconductor Materials Science, Institute of SemiconductorsChinese Academy of Sciences
Article

DOI: 10.1023/A:1007030119338

Cite this article as:
Sun, Z., Ding, D., Gong, Q. et al. Optical and Quantum Electronics (1999) 31: 1235. doi:10.1023/A:1007030119338

Abstract

We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should give a wider output spectrum than a conventional quantum well SLD. The device makes use of inhomogeneous broadness of gain spectrum resulting from size inhomogeneity of self-assembled quantum dots grown by Stranski– Krastanow mode. Taking a design made out in the InxGa1-xAs/GaAs system for example, the spectrum characteristics of the device are simulated realistically, 100–200 nm full width of half maximum of output spectrum can be obtained. The dependence of the output spectrum on In composition, size distribution and injection current of the dots active region is also elaborated.

quantum dotSLDwide spectrum

Copyright information

© Kluwer Academic Publishers 1999