Journal of Materials Science Letters

, Volume 19, Issue 9, pp 817–821

Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown

Authors

  • C. L. Cha
    • Center For Optoelectronics, Department of Electrical EngineeringNational University of Singapore
  • E. F. Chor
    • Center For Optoelectronics, Department of Electrical EngineeringNational University of Singapore
  • H. Gong
    • Center For Optoelectronics, Department of Electrical EngineeringNational University of Singapore
  • L. Chan
    • Research and Development DepartmentChartered Semiconductor Manufacturing Ltd.
Article

DOI: 10.1023/A:1006745528344

Cite this article as:
Cha, C.L., Chor, E.F., Gong, H. et al. Journal of Materials Science Letters (2000) 19: 817. doi:10.1023/A:1006745528344

Copyright information

© Kluwer Academic Publishers 2000