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Composition and Properties of Layered Compounds in the GeTe–Sb2Te3System

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Inorganic Materials Aims and scope

Abstract

The 620-K section of the Ge–Sb–Te phase diagram was mapped out using x-ray diffraction, microstructural analysis, and microhardness measurements. The transport properties of the layered tetradymite-like compounds nGeTe · mSb2Te3(n, m= 1–4) were studied in wide temperature ranges (Hall effect and electrical resistivity, from 77 to 800 K, and thermoelectric power, from 90 to 450 K). The results show that the nGeTe · mSb2Te3compounds are degeneratep-type semiconductors with a fairly high hole concentration due to the high density of intrinsic point defects. The temperature dependences of the Hall coefficient and resistivity exhibit anomalies related to solid-state phase transitions. The room-temperature lattice thermal conductivity ofnGeTe · mSb2Te3is fairly low, in the range 8–10 mW/(cm K).

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Authors and Affiliations

  1. Baikov Institute of Metallurgy and Materials Research, Russian Academy of Sciences, Leninskii pr. 49, Moscow, 117334, Russia

    L. E. Shelimova, O. G. Karpinskii, M. A. Kretova, E. S. Avilov & V. S. Zemskov

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    P. P. Konstantinov

Authors
  1. L. E. Shelimova
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  2. O. G. Karpinskii
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  3. P. P. Konstantinov
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  4. M. A. Kretova
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  5. E. S. Avilov
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  6. V. S. Zemskov
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Shelimova, L.E., Karpinskii, O.G., Konstantinov, P.P. et al. Composition and Properties of Layered Compounds in the GeTe–Sb2Te3System. Inorganic Materials 37, 342–348 (2001). https://doi.org/10.1023/A:1017519625907

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