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Characterization of the p-type Sn1−x Mn x O2 oxide semiconductor nanoparticles by Sol-Gel method

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Abstract

This paper reports the properties of p-type oxide semiconductor Sn1−x Mn x O2 (MTO) nanoparticles with a low doping concentration of Mn (0 ≤ x ≤ 0.05) prepared with a sol-gel method. X-ray diffraction (XRD) results show that single-phase rutile MTO was obtained for x up to 0.03. The samples have particle average size of about 100 nm, which was confirmed with scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The compositional changes and electrical properties of the MTO nanoparticles were characterized by using x-ray photoelectron spectroscopy (XPS) and Hall effect measurements. Mn3+ cations are incorporated into the rutile SnO2 lattice. P-type conduction which is arisen from the substitution of Mn3+ to Sn4+ lattice was demonstrate by Hall data. These compositions have hole carrier concentrations in the range 2.26∼8.53 × 1016 cm−3 and exhibit Hall mobilities in the range 0.8∼4.1 cm2/Vs. The mobility of MTO decreases as the Mn content increases due to the doping effect. A transparent, ptype TFT device can be fabricated with this composition.

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Authors and Affiliations

  1. Future Convergence Research Division, Korea Institute of Science and Technology, Seoul, 136-791, Korea

    Chil-Hyoung Lee & Young-Jei Oh

  2. Department of Advanced Materials Science & Engineering, Yonsei University, Seoul, 120-749, Korea

    Chil-Hyoung Lee & Doo-Jin Choi

Authors
  1. Chil-Hyoung Lee
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  2. Doo-Jin Choi
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  3. Young-Jei Oh
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Correspondence to Young-Jei Oh.

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Lee, CH., Choi, DJ. & Oh, YJ. Characterization of the p-type Sn1−x Mn x O2 oxide semiconductor nanoparticles by Sol-Gel method. Electron. Mater. Lett. 9, 283–286 (2013). https://doi.org/10.1007/s13391-012-2140-9

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  • DOI: https://doi.org/10.1007/s13391-012-2140-9

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