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Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

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Abstract

The NH3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiOx interfacial layer (IL) (about 0.12 nm more in terms of EOT scaling) and a more densified HfZrO2 layer compared to those obtained using NH3 thermal annealing at a 16% nitrogen dose. NH3 thermal nitridation causes a large nitrogen distribution tail at the SiOx IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

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Authors and Affiliations

  1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan, R. O. C

    Chen-Kuo Chiang & Shui-Jinn Wang

  2. Department of Electronics Engineering, Chung Hua University, Hsinchu, 30012, Taiwan, R. O. C

    Chien-Hung Wu

  3. United Microelectronics Corporation, Science-Based Industrial Park, Hsinchu, 300, Taiwan, R. O. C

    Chen-Kuo Chiang, Chin-Chien Liu, Jin-Fu Lin, Chien-Lun Yang & Jiun-Yuan Wu

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  1. Chen-Kuo Chiang
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  2. Chien-Hung Wu
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  3. Chin-Chien Liu
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  4. Jin-Fu Lin
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  5. Chien-Lun Yang
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Correspondence to Shui-Jinn Wang.

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Chiang, CK., Wu, CH., Liu, CC. et al. Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process. Electron. Mater. Lett. 8, 535–539 (2012). https://doi.org/10.1007/s13391-012-2030-1

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  • DOI: https://doi.org/10.1007/s13391-012-2030-1

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