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Investigation of Multilayers Structures Based on the Langmuir-Blodgett Films of CdSe/ZnS Quantum Dots

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Abstract

Quantum dots are a perspective material for creation of optoelectronic devices including light emitting structures. The application of mono- or bilayer of QD is more efficient method than using bulk layers of QD. The main disadvantage of quantum dots creation method is an excess of organic molecules in the structure. One of the way that allows remove this excess is a thermal treatment of structures. However, a thermal treatment has an effect on structure and, consequently, on optical properties. The alteration of fluorescence intensity of thin film incorporating quantum dots (QD) was studied. The films incorporating QDs were formed with Langmuir-Schaefer technique. Films were annealed under the oxygen atmosphere and temperature of 300, 400, 500, and 600 °C for 10 min. The decrease of fluorescence intensity and shifting of fluorescence peak were observed. It is related to oxidation process of quantum dots structure and partial depassivation of electron states of external shell of a quantum dot.

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References

  1. Randall, J. N., James, H., Luscombe, R. T. (1994). Bate, chapter 13—quantum dot devices. VLSI Electronics Microstructure Science, 24, 419–445.

    Article  Google Scholar 

  2. Kima, H. S., & Yoon, K. B. (2014). Preparation and characterization of CdS and PbS quantum dots in zeolite Y and their applications for nonlinear optical materials and solar cell. Coordination Chemistry Reviews, 263–264, 239–256.

    Article  Google Scholar 

  3. Eita, M., Wagberg, L., Muhammed, M. (2012). Spin-assisted multilayers of poly(methyl methacrylate) and zinc oxide quantum dots for ultraviolet-blocking applications. ACS Applied Materials & Interfaces, 4, 2920–2925.

    Article  Google Scholar 

  4. Leck, K. S., Divayana, Y., Zhao, D., et al. (2013). Quantum dot light-emitting diode with quantum dots inside the hole transporting layers. ACS Applied Materials & Interfaces, 5, 6535–6540.

    Article  Google Scholar 

  5. Yolanda, J., Moreels, I., Lambert, K., et al. (2010). Langmuir–Blodgett monolayers of colloidal lead chalcogenide quantum dots: morphology and photoluminescence. Nanotechnology, 21, 295606.

    Article  Google Scholar 

  6. Lambert, K., Capek, R. K., Bodnarchuk, M. I., Kovalenko, M. V., Thourhout, V. D., Heiss, W., et al. (2010). Langmuir-Schaefer deposition of quantum dot multilayers. Langmuir, 26(11), 7732–7736.

    Article  Google Scholar 

  7. Lambert, K., Wittebrood, L., Moreels, I., et al. (2006). Langmuir–Blodgett monolayers of InP quantum dots with short chain ligands. Journal of Colloid and Interface Science, 300, 597–602.

    Article  Google Scholar 

  8. Xiangqiang, Z., Shili, H., Huibing, M., Jiqing, W., et al. (2010). Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots. Applied Surface Science, 256, 3862–3865.

    Article  Google Scholar 

  9. Jo, B., Kim, J., Lee, J. K., et al. (2010). Optical properties of the InAs/InAlGaAs quantum dots subjected to thermal treatments. Thin Solid Films, 518, 6429–6431.

    Article  Google Scholar 

  10. Han, G., Zeng, Y., Liu, Y., et al. (2008). Small SiGe quantum dots obtained by excimer laser annealing. Journal of Crystal Growth, 310, 3746–3751.

    Article  Google Scholar 

  11. Kim, B. H., Davis, F. R., Park, S. J. (2010). Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing. Thin Solid Films, S18, 1744–1746.

    Article  Google Scholar 

  12. Shaikh, U. S., Desale, D. J., Siddiqui, F. Y., et al. (2012). Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications. Materials Research Bulletin, 47, 3440–3444.

    Article  Google Scholar 

  13. Speranskaya, E. S., Beloglazova, N. V., Lenain, P., De Saeger, S., Wang, Z., Zhang, S., et al. (2014). Polymer-coated fluorescent CdSe-based quantum dots for application in immunoassay. Biosensors and Bioelectronics, 53, 225–231.

    Article  Google Scholar 

  14. Dhananjay, B., & Chantal, K. M. (2007). Direct patterning of quantum dots on structured PDMS surface. Sensors and Actuators B: Chemical, 128(1), 168–172.

    Article  Google Scholar 

  15. Zhao, Y., Riemersma, C., Pietra, F., et al. (2012). High-temperature luminescence quenching of colloidal quantum dots. ACS Nano, 6(10), 9058–9067.

    Article  Google Scholar 

  16. Bullen, C., & Mulvaney, P. (2006). The effects of chemisorption on the luminescence of CdSe quantum dots. Langmuir, 22, 3007–3013.

    Article  Google Scholar 

  17. Liu, L., Peng, Q., Li, Y. (2008). An effective oxidation route to blue emission CdSe quantum dots. Inorganic Chemistry, 47, 3182–3187.

    Article  Google Scholar 

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Acknowledgments

The work is supported by grant no. 14-12-00275 of Russian Science Foundation and Saratov State University named after N.G. Chernyshevsky

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Authors and Affiliations

  1. Faculty of Nano- and Biomedical Technologies, Department of Material Science, Technology and Quality Management, Saratov State University named after N.G. Chernyshevsky, 112a Bolshaya Kazachiya Street, Saratov, 410012, Russia

    I. A. Gorbachev & E. G. Glukhovskoy

  2. Institute of Chemistry, Department of General and Inorganic Chemistry, Saratov State University named after N.G. Chernyshevsky, 83 b.1 Astrakhanskaya Street, Saratov, 410012, Russia

    I. Yu Goryacheva

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  1. I. A. Gorbachev
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  2. I. Yu Goryacheva
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  3. E. G. Glukhovskoy
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Correspondence to I. A. Gorbachev.

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Gorbachev, I.A., Goryacheva, I.Y. & Glukhovskoy, E.G. Investigation of Multilayers Structures Based on the Langmuir-Blodgett Films of CdSe/ZnS Quantum Dots. BioNanoSci. 6, 153–156 (2016). https://doi.org/10.1007/s12668-016-0194-0

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  • DOI: https://doi.org/10.1007/s12668-016-0194-0

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