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Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device

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Abstract

In this paper, a Schottky barrier silicon-on-insulator (SOI) MOSFET with asymmetric doping (dopant segregated) at the source/drain side and a metal strip in the BOX (Buried oxide) layer has been proposed. The asymmetric doping reduces the off-state leakage (IOFF) and improves the on-state drive current (ION) in comparison to the conventional structure. The metal strip inside the BOX improves the subthreshold swing and ION/IOFF current ratio. The simulation study of a conventional device using an image force barrier lowering model and without image force barrier lowering is presented. The channel length scaling leads to a high on-current in the conventional device. The thermionic emission and tunneling current are increased with barrier lowering and hence a high leakage current in the off-state region. Moreover, the proposed device is compared with the conventional device. The proposed device shows high ION/IOFF ratio of 107-108 at VDS = 0.1 V and Subthreshold Swing (SS) of 66 mV/dec.

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Authors and Affiliations

  1. Electronics and Communication Engineering Department NIT Silchar, Assam, 788010, India

    Prashanth Kumar,  WasimArif & Brinda Bhowmick

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  1. Prashanth Kumar
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  2. WasimArif
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  3. Brinda Bhowmick
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Correspondence to Prashanth Kumar.

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Kumar, P., WasimArif & Bhowmick, B. Scaling of Dopant Segregation Schottky Barrier Using Metal Strip Buried Oxide MOSFET and its Comparison with Conventional Device. Silicon 10, 811–820 (2018). https://doi.org/10.1007/s12633-016-9534-5

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  • DOI: https://doi.org/10.1007/s12633-016-9534-5

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