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A Functional Material Based Heterojunction Diode

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Abstract

In this study, the phosphotungstic acid /p-Si diode was fabricated by a drop coating method. The fabricated diode had excellent rectifying properties. The electrical properties of the diode were investigated in the temperature range of 50-400 K. The optical band gap of the phosphotungstic acid film was determined and found to be 3.66 eV. The electrical and photoresponse properties of an Al/p-Si-phosphotungstic acid/Al photodiode were studied. The electronic parameters such as ideality factor (n), barrier height (Φ B ) and series resistance (R s ) were found to be strongly temperature dependent.

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Acknowledgments

The authors extend their appreciation to the International Scientific Partnership Program ISPP at King Saud University for funding this research work through ISPP# 0046.

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Authors and Affiliations

  1. Department of Physics, Al al-Bayt University, Mafraq, Jordan

    H. M. El-Nasser

  2. Department of Materials Engineering, College of Engineering, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana

    K. Mensah-Darkwa

  3. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia

    Norah Al-Senany, Ahmed Al-Ghamdi & F. Yakuphanoglu

  4. Department of Chemistry, Pittsburg State University, Pittsburg, KS, 66762, USA

    R. K. Gupta

  5. Department of Astronomy and Physics, College of Science, King Saud University, Riyadh, Saudi Arabia

    W. A. Farooq

  6. Department of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt

    F. El-Tantawy

  7. Department of Physics, Faculty of Science, Fırat University, Elazığ, Turkey

    F. Yakuphanoglu

Authors
  1. H. M. El-Nasser
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  2. K. Mensah-Darkwa
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  3. Norah Al-Senany
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  4. Ahmed Al-Ghamdi
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  5. R. K. Gupta
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  6. W. A. Farooq
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  7. F. El-Tantawy
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  8. F. Yakuphanoglu
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Corresponding author

Correspondence to F. Yakuphanoglu.

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El-Nasser, H.M., Mensah-Darkwa, K., Al-Senany, N. et al. A Functional Material Based Heterojunction Diode. Silicon 10, 737–746 (2018). https://doi.org/10.1007/s12633-016-9525-6

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  • DOI: https://doi.org/10.1007/s12633-016-9525-6

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