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Synthesis and Characterization of Porogen Based Porous Low-k Thin Films

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Abstract

The present work is focused towards the lowering of the k value of deposited SiO2 thin films by varying solvent concentration i.e. ethanol in the range 4-10 ml. Porous low-k thin films were synthesized by using the sol-gel spinon technique. A non-ionic surfactant polysorbate 80 (Tween 80) was used as a porogen to generate the porosity in the film matrix. The lower values of refractive index and film density were measured to be 1.19 and 0.94 gm/cm3 respectively for 10 ml solvent concentration. Further, the lowest k value of 2.2 and highest porosity percentage of 58.5 % were obtained for the same film due to the dilution of coating solution at higher solvent concentration. The water contact angle of the film was observed to be increased to 106.3° which indicates the transformation of the deposited film surface from hydrophilic to hydrophobic. The change in chemical structure as an effect of solvent concentration is studied by using FTIR. From FTIR spectra the disappearance of Si-OH groups at higher solvent concentration reveals the increase in condensation rate. Overall in this study, the result shows the significant change in structural, chemical and optical properties of the deposited films at 10 ml solvent concentration. Such deposited porous thin films with lower k value and enhanced hydrophobicity can be used as an interlayer dielectric (ILD) for back end of line (BEOL) in CMOS technology.

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Authors and Affiliations

  1. Department of Electronics, North Maharashtra University, Jalgaon, (M.S.), 425001, India

    Namrata B. Pawar, Anil S. Gaikwad & Ashok M. Mahajan

  2. Department of Electronics, G. S. Science, Arts and Commerce College, Khamgaon, India

    Yogesh S. Mhaisagar

Authors
  1. Namrata B. Pawar
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  2. Yogesh S. Mhaisagar
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  3. Anil S. Gaikwad
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  4. Ashok M. Mahajan
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Correspondence to Ashok M. Mahajan.

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Pawar, N.B., Mhaisagar, Y.S., Gaikwad, A.S. et al. Synthesis and Characterization of Porogen Based Porous Low-k Thin Films. Silicon 9, 439–446 (2017). https://doi.org/10.1007/s12633-016-9475-z

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  • DOI: https://doi.org/10.1007/s12633-016-9475-z

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