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The Effect of a Porous Layer on I-V Characterization of a Polysilicon p-n Junction

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Abstract

In this study, we investigate the effect of an etching process on the rectification property of a p-n junction. To achieve this goal, electrochemical etching (ECE) was employed, using a HF based solution. The morphological properties of the porous samples were characterized by Field Emission Scanning Electron Microscopy (FESEM). The images showed distributed pores in the range of several nanometers. Also, the distribution showed improvement in the size of meso- to macropores. The Current-Voltage measurement of porous and pristine poly silicon p-n junctions was done in dark and illumination conditions. I-V properties in illumination revealed intensive rectification in the proposed junction. Under dark condition, the ideality factor of the porous poly silicon p-n junction was approximately 3.9, which compared to 4.2 for the pristine sample demonstrates 7% improvement. Also, the light sensitivity was increased in the porous one. Furthermore, the light response (Δφ BP) of the porous sample gave the value of 0.02. In conclusion, the rectification mode could be enhanced through relevant porosity.

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Authors and Affiliations

  1. Faculty of Caspian, College of Engineering, University of Tehran, Tehran, Iran

    Hamid Ghorbani Shiraz & Seyed Hamed Mousavi

  2. Faculty of New Sciences and Technologies, University of Tehran, Tehran, Iran

    Fatemeh Razi Astaraei & Fereshteh Rahimi

  3. School of Chemical Engineering, College of Engineering, University of Tehran, Tehran, Iran

    Omid Tavakoli

Authors
  1. Hamid Ghorbani Shiraz
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  2. Fatemeh Razi Astaraei
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  3. Omid Tavakoli
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  4. Seyed Hamed Mousavi
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  5. Fereshteh Rahimi
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Correspondence to Fatemeh Razi Astaraei.

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Shiraz, H.G., Astaraei, F.R., Tavakoli, O. et al. The Effect of a Porous Layer on I-V Characterization of a Polysilicon p-n Junction. Silicon 10, 205–210 (2018). https://doi.org/10.1007/s12633-016-9417-9

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  • DOI: https://doi.org/10.1007/s12633-016-9417-9

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