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Analysis of Thermal Effects on Electrical Characterization of AlGaN/GaN/Si FAT-HEMTs

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Abstract

In this paper we report on the characteristics of Schottky contact behavior of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on a Si Substrate. A variety of electrical techniques such as capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been used to characterize the diode. The behavior of the ideality factor n, the effective barrier height Φb, and the series resistance RS is studied with temperature. C-V measurements successively sweeping up and down the voltage from 0 V to 12 V(absolute value) have demonstrated a hysteresis phenomenon which is more pronounced when the temperature increases. This parasitic effect can be attributed to the presence of traps activated in the Schottky diode. The related deep levels defects which are responsible for parasitic effects, were characterized and extracted by the Deep Level Transient Spectroscopy (DLTS) technique that has been used in previous studies. The identification of these traps showed a correlation between DLTS and C-V measurements.

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Authors and Affiliations

  1. Laboratory of Micro-Optoelectroniques and Nanostructures, University of Monastir, 5019, Monastir, Tunisia

    Fikria Jabli, Malek Gassoumi, Manel Charfeddine, Mohamed Ali Zaidi & Hassen Maaref

  2. College of Science Al-Zulfi, Al majmaah University, Po Box 1712, Al-Zulfi, 11932, Arabi Saoudite

    T. Alharbi & Mohamed Ali Zaidi

  3. Department of Physics, College of Science, Qassim University, Buraidah, 51452, Saudi Arabia

    Malek Gassoumi

  4. Chemistry Department, College of Science, IMSIU (Al Imam Mohammad Ibn Saud Islamic University), Riyadh, 11623, Saudi Arabia

    Nawfel Ben Hamadi

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  1. Fikria Jabli
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  2. Malek Gassoumi
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  3. Nawfel Ben Hamadi
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  4. Manel Charfeddine
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  5. T. Alharbi
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  6. Mohamed Ali Zaidi
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  7. Hassen Maaref
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Correspondence to Malek Gassoumi.

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Jabli, F., Gassoumi, M., Hamadi, N.B. et al. Analysis of Thermal Effects on Electrical Characterization of AlGaN/GaN/Si FAT-HEMTs. Silicon 9, 629–635 (2017). https://doi.org/10.1007/s12633-015-9337-0

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  • DOI: https://doi.org/10.1007/s12633-015-9337-0

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