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Determination of the Boron and Phosphorus Ionization Energies in Compensated Silicon by Temperature-Dependent Luminescence

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Abstract

The determination of boron and phosphorus ionization energies in compensated silicon is very important for assessing the ionization level of dopants and their interaction with each other. In this paper, we achieved the boron and phosphorus ionization energies in compensated silicon by temperature-dependent luminescence for the first time. The results show that the boron and phosphorus ionization energies in heavily-compensated silicon have the same values as those in non-compensated silicon. This strongly suggests that both boron and phosphorus impurities with a concentration of ≤ 10 17 cm −3 should act as isolated acceptors and donors, but do not form complexes in silicon.

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Acknowledgments

This work is supported by National Natural Science Foundation of China (No. 61274057), National Key Technology R&D Program (2011BAE03B13), and Innovation Team Project of Zhejiang Province (2009R50005).

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials and Department of Materials Science & Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Chengquan Xiao, Deren Yang, Xuegong Yu, Luelue Xiang & Duanlin Que

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  1. Chengquan Xiao
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  2. Deren Yang
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  3. Xuegong Yu
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  4. Luelue Xiang
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  5. Duanlin Que
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Correspondence to Xuegong Yu.

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Xiao, C., Yang, D., Yu, X. et al. Determination of the Boron and Phosphorus Ionization Energies in Compensated Silicon by Temperature-Dependent Luminescence. Silicon 9, 147–151 (2017). https://doi.org/10.1007/s12633-014-9193-3

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  • DOI: https://doi.org/10.1007/s12633-014-9193-3

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