Abstract
A qualitative evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is discussed here for application in low dimensional semiconductors. The step-by-step evolution reported here is based on the phonon confinement model which is successfully used in literature to explain the asymmetric Raman line-shape from semiconductor nanostructures. Physical significance of different terms in the theoretical asymmetric Raman line-shape has been explained here. Better understanding of theoretical reasoning behind each term allows one to use the theoretical Raman line-shape without going into the details of theory from first principle. This will enable one to empirically derive a theoretical Raman line-shape function for any material if information about its phonon dispersion relation, size dependence, etc., is known.
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Kumar, R., Sahu, G., Saxena, S.K. et al. Qualitative Evolution of Asymmetric Raman Line-Shape for NanoStructures. Silicon 6, 117–121 (2014). https://doi.org/10.1007/s12633-013-9176-9
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DOI: https://doi.org/10.1007/s12633-013-9176-9