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Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

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Abstract

Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the “sneaking current problem”, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaO x -based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density (1 MA·cm–2), high selectivity (5 × 104), low off-state current (~10 pA), robust endurance (>1010), self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor (1S1R) device exhibits high nonlinearity in the low resistance state (LRS), which is quite effective in solving the sneaking current issue.

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Acknowledgements

This work was supported by the National Key Research and Development Program of China (Nos. 2016YFA0203800 and 2016YFA0201803) and the National Natural Science Foundation of China (No. 61522408).

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Authors and Affiliations

  1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Qing Luo, Xiaoxin Xu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Ling Li & Ming Liu

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Qing Luo, Xiaoxin Xu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Ling Li & Ming Liu

  3. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 211800, China

    Hangbing Lv & Ming Liu

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  1. Qing Luo
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  2. Xiaoxin Xu
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  3. Hangbing Lv
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  4. Tiancheng Gong
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  6. Qi Liu
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  7. Ling Li
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  8. Ming Liu
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Correspondence to Hangbing Lv or Ming Liu.

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Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

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Luo, Q., Xu, X., Lv, H. et al. Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array. Nano Res. 10, 3295–3302 (2017). https://doi.org/10.1007/s12274-017-1542-2

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  • DOI: https://doi.org/10.1007/s12274-017-1542-2

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