Abstract
ZnGa2O4 nanowires (NWs) as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as highperformance ultraviolet (UV) photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity (3,174 A/W) and high external quantum efficiency (1.1 × 106%) at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate (PET) substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices.
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Lou, Z., Li, L. & Shen, G. High-performance rigid and flexible ultraviolet photodetectors with single-crystalline ZnGa2O4 nanowires. Nano Res. 8, 2162–2169 (2015). https://doi.org/10.1007/s12274-015-0723-0
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DOI: https://doi.org/10.1007/s12274-015-0723-0