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Contracted interlayer distance in graphene/sapphire heterostructure

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Abstract

Direct growth of graphene on insulators is expected to yield significant improvements in performance of graphene-based electronic and spintronic devices. In this study, we successfully reveal the atomic arrangement and electronic properties of a coherent heterostructure of single-layer graphene and α-Al2O3(0001). The analysis of the atomic arrangement of single-layer graphene on α-Al2O3(0001) revealed an apparentcontradiction. The in-plane analysis shows that single-layer graphene grows not in a single-crystalline epitaxial manner, but rather in polycrystalline form, with two strongly pronounced preferred orientations. This suggests relatively weak interfacial interactions are operative. However, we demonstrate that unusually strong physical interactions between graphene and α-Al2O3(0001) exist, as evidenced by the small separation between the graphene and the α-Al2O3(0001) surface. The interfacial interaction is shown to be dominated by the electrostatic forces involved in the graphene π-system and the unsaturated electrons of the topmost O layer of α-Al2O3(0001), rather than the van der Waals interactions. Such features causes graphene hole doping and enable the graphene to slide on the α-Al2O3(0001) surface with only a small energy barrier despite the strong interfacial interactions.

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Authors and Affiliations

  1. Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki, 319-1195, Japan

    Shiro Entani, Pavel V. Avramov, Manabu Ohtomo, Yoshihiro Matsumoto, Hiroshi Naramoto, Pavel B. Sorokin & Seiji Sakai

  2. Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, 142190, Russian Federation

    Liubov Yu. Antipina & Pavel B. Sorokin

  3. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow, 141700, Russian Federation

    Liubov Yu. Antipina

  4. Siberian Federal University, 79 Svobodniy pr., Krasnoyarsk, 660041, Russian Federation

    Pavel V. Avramov

  5. Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai, Ibaraki, 319-1195, Japan

    Norie Hirao, Iwao Shimoyama & Yuji Baba

  6. National University of Science and Technology MISiS, Moscow, 119049, Russian Federation

    Pavel B. Sorokin

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  1. Shiro Entani
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Correspondence to Shiro Entani or Pavel B. Sorokin.

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Entani, S., Antipina, L.Y., Avramov, P.V. et al. Contracted interlayer distance in graphene/sapphire heterostructure. Nano Res. 8, 1535–1545 (2015). https://doi.org/10.1007/s12274-014-0640-7

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