Research Article

Nano Research

, Volume 5, Issue 12, pp 854-862

Strain-induced D band observed in carbon nanotubes

  • Chia-Chi ChangAffiliated withDepartment of Physics, University of Southern California
  • , Chun-Chung ChenAffiliated withDepartment of Electrical Engineering, University of Southern California
  • , Wei-Hsuan HungAffiliated withDepartment of Materials Science and Engineering, Feng Chia University
  • , I. -Kai HsuAffiliated withDepartment of Materials Science, University of Southern California
  • , Marcos A. PimentaAffiliated withDepartamento de Física, Universidade Federal de Minas Gerais
  • , Stephen B. CroninAffiliated withDepartment of Physics, University of Southern CaliforniaDepartment of Electrical Engineering, University of Southern California Email author 

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

We report the emergence of the D band Raman mode in single-walled carbon nanotubes under large axial strain. The D to G mode Raman intensity ratio (I D/I G) is observed to increase with strain quadratically by more than a factor of 100-fold. Up to 5% strain, all changes in the Raman spectra are reversible. The emergence of the D band, instead, arises from the reversible and elastic symmetry-lowering of the sp2 bonds structure. Beyond 5%, we observe irreversible changes in the Raman spectra due to slippage of the nanotube from the underlying substrate, however, the D band intensity resumes its original pre-strain intensity, indicating that no permanent defects are formed.
http://static-content.springer.com/image/art%3A10.1007%2Fs12274-012-0269-3/MediaObjects/12274_2012_269_Fig1_HTML.gif

Keywords

SWCNTs Raman D band defects strain sp2 bond