Nano Research

, Volume 5, Issue 12, pp 854–862

Strain-induced D band observed in carbon nanotubes

Authors

  • Chia-Chi Chang
    • Department of PhysicsUniversity of Southern California
  • Chun-Chung Chen
    • Department of Electrical EngineeringUniversity of Southern California
  • Wei-Hsuan Hung
    • Department of Materials Science and EngineeringFeng Chia University
  • I. -Kai Hsu
    • Department of Materials ScienceUniversity of Southern California
  • Marcos A. Pimenta
    • Departamento de FísicaUniversidade Federal de Minas Gerais
    • Department of PhysicsUniversity of Southern California
    • Department of Electrical EngineeringUniversity of Southern California
Research Article

DOI: 10.1007/s12274-012-0269-3

Cite this article as:
Chang, C., Chen, C., Hung, W. et al. Nano Res. (2012) 5: 854. doi:10.1007/s12274-012-0269-3

Abstract

We report the emergence of the D band Raman mode in single-walled carbon nanotubes under large axial strain. The D to G mode Raman intensity ratio (ID/IG) is observed to increase with strain quadratically by more than a factor of 100-fold. Up to 5% strain, all changes in the Raman spectra are reversible. The emergence of the D band, instead, arises from the reversible and elastic symmetry-lowering of the sp2 bonds structure. Beyond 5%, we observe irreversible changes in the Raman spectra due to slippage of the nanotube from the underlying substrate, however, the D band intensity resumes its original pre-strain intensity, indicating that no permanent defects are formed.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-012-0269-3/MediaObjects/12274_2012_269_Fig1_HTML.gif

Keywords

SWCNTsRamanD banddefectsstrainsp2 bond

Supplementary material

12274_2012_269_MOESM1_ESM.pdf (212 kb)
Supplementary material, approximately 214 KB.

Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2012