Nano Research

, Volume 3, Issue 2, pp 110–116

Crystallographically selective nanopatterning of graphene on SiO2


    • Research Institute for Technical Physics and Materials Science
  • Gábor Magda
    • Budapest University of Technology and Economics (BME)
  • Katalin Kamarás
    • Research Institute for Solid State Physics and OpticsHungarian Academy of Sciences
  • László Péter Biró
    • Research Institute for Technical Physics and Materials Science
Open AccessResearch Article

DOI: 10.1007/s12274-010-1015-3

Cite this article as:
Nemes-Incze, P., Magda, G., Kamarás, K. et al. Nano Res. (2010) 3: 110. doi:10.1007/s12274-010-1015-3


Graphene has many advantageous properties, but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications, for example, field-effect transistors. This problem can be circumvented by opening up a confinement-induced gap, through the patterning of graphene into ribbons having widths of a few nanometres. The electronic properties of such ribbons depend on both their size and the crystallographic orientation of the ribbon edges. Therefore, etching processes that are able to differentiate between the zigzag and armchair type edge terminations of graphene are highly sought after. In this contribution we show that such an anisotropic, dry etching reaction is possible and we use it to obtain graphene ribbons with zigzag edges. We demonstrate that the starting positions for the carbon removal reaction can be tailored at will with precision.


Grapheneatomic force microscopy (AFM)etchingnanoribbonzigzag
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Supplementary material

12274_2010_1015_MOESM1_ESM.pdf (899 kb)
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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010