Abstract

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).

https://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-1013-5/MediaObjects/12274_2010_1013_Fig1_HTML.jpg

Keywords

Suspended graphene shadow mask mobility lithography-free e-beam evaporation

Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010