Nano Research

, Volume 3, Issue 2, pp 98–102

Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices

  • Wenzhong Bao
  • Gang Liu
  • Zeng Zhao
  • Hang Zhang
  • Dong Yan
  • Aparna Deshpande
  • Brian LeRoy
  • Chun Ning Lau
Open AccessResearch Article

DOI: 10.1007/s12274-010-1013-5

Cite this article as:
Bao, W., Liu, G., Zhao, Z. et al. Nano Res. (2010) 3: 98. doi:10.1007/s12274-010-1013-5

Abstract

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).

https://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-1013-5/MediaObjects/12274_2010_1013_Fig1_HTML.jpg

Keywords

Suspended grapheneshadow maskmobilitylithography-freee-beam evaporation
Download to read the full article text

Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  • Wenzhong Bao
    • 1
  • Gang Liu
    • 1
  • Zeng Zhao
    • 1
  • Hang Zhang
    • 1
  • Dong Yan
    • 2
  • Aparna Deshpande
    • 3
  • Brian LeRoy
    • 3
  • Chun Ning Lau
    • 1
  1. 1.Department of Physics and AstronomyUniversity of CaliforniaRiversideUSA
  2. 2.Center for Nanoscale Science and EngineeringUniversity of CaliforniaRiversideUSA
  3. 3.Department of PhysicsUniversity of ArizonaTucsonUSA