Research Article

Nano Research

, Volume 3, Issue 2, pp 98-102

Open Access This content is freely available online to anyone, anywhere at any time.

Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices

  • Wenzhong BaoAffiliated withDepartment of Physics and Astronomy, University of California
  • , Gang LiuAffiliated withDepartment of Physics and Astronomy, University of California
  • , Zeng ZhaoAffiliated withDepartment of Physics and Astronomy, University of California
  • , Hang ZhangAffiliated withDepartment of Physics and Astronomy, University of California
  • , Dong YanAffiliated withCenter for Nanoscale Science and Engineering, University of California
  • , Aparna DeshpandeAffiliated withDepartment of Physics, University of Arizona
  • , Brian LeRoyAffiliated withDepartment of Physics, University of Arizona
  • , Chun Ning LauAffiliated withDepartment of Physics and Astronomy, University of California Email author 

Abstract

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V·s).

http://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-1013-5/MediaObjects/12274_2010_1013_Fig1_HTML.jpg

Keywords

Suspended graphene shadow mask mobility lithography-free e-beam evaporation