Open Access
Research Article

Nano Research

, Volume 3, Issue 1, pp 8-15

Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material

Authors

  • Yijian Ouyang
    • Department of Electrical and Computer EngineeringUniversity of Florida
  • Hongjie Dai
    • Department of ChemistryStanford University
  • Jing Guo
    • Department of Electrical and Computer EngineeringUniversity of Florida

DOI: 10.1007/s12274-010-1002-8

Abstract

The performance limits of a multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared with those of a monolayer GNRFET and a carbon nanotube (CNT) FET. The results show that with a thin high dielectric constant (high-κ) gate insulator and reduced interlayer coupling, a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-1002-8/MediaObjects/12274_2010_1002_Fig1_HTML.jpg

Keywords

graphene nanoribbon (GNR) multilayer graphene new channel material field-effect transistor carbon nanotube (CNT)

Copyright information

© Tsinghua University Press and Springer Berlin Heidelberg 2010