Research Article

Nano Research

, Volume 3, Issue 1, pp 8-15

First online:

Open Access This content is freely available online to anyone, anywhere at any time.

Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material

  • Yijian OuyangAffiliated withDepartment of Electrical and Computer Engineering, University of Florida
  • , Hongjie DaiAffiliated withDepartment of Chemistry, Stanford University
  • , Jing GuoAffiliated withDepartment of Electrical and Computer Engineering, University of Florida Email author 


The performance limits of a multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared with those of a monolayer GNRFET and a carbon nanotube (CNT) FET. The results show that with a thin high dielectric constant (high-κ) gate insulator and reduced interlayer coupling, a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs.


graphene nanoribbon (GNR) multilayer graphene new channel material field-effect transistor carbon nanotube (CNT)