Nano Research

, Volume 3, Issue 1, pp 8–15

Projected performance advantage of multilayer graphene nanoribbons as a transistor channel material

Open AccessResearch Article

DOI: 10.1007/s12274-010-1002-8

Cite this article as:
Ouyang, Y., Dai, H. & Guo, J. Nano Res. (2010) 3: 8. doi:10.1007/s12274-010-1002-8

Abstract

The performance limits of a multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared with those of a monolayer GNRFET and a carbon nanotube (CNT) FET. The results show that with a thin high dielectric constant (high-κ) gate insulator and reduced interlayer coupling, a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current. In the presence of optical phonon scattering, which has a short mean free path in the graphene-derived nanostructures, the advantage of the multilayer GNRFET is even more significant. Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-1002-8/MediaObjects/12274_2010_1002_Fig1_HTML.jpg

Keywords

graphene nanoribbon (GNR)multilayer graphenenew channel materialfield-effect transistorcarbon nanotube (CNT)
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Copyright information

© Tsinghua University Press and Springer Berlin Heidelberg 2010

Authors and Affiliations

  1. 1.Department of Electrical and Computer EngineeringUniversity of FloridaGainesvilleUSA
  2. 2.Department of ChemistryStanford UniversityStanfordUSA