Nano Research

, Volume 3, Issue 8, pp 545–556

Strain effects in graphene and graphene nanoribbons: The underlying mechanism

Authors

  • Yang Li
    • College of Chemistry and Molecular Engineering, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, and Beijing National Laboratory for Molecular SciencesPeking University
    • School of PhysicsPeking University
  • Xiaowei Jiang
    • College of Chemistry and Molecular Engineering, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, and Beijing National Laboratory for Molecular SciencesPeking University
    • School of PhysicsPeking University
  • Zhongfan Liu
    • College of Chemistry and Molecular Engineering, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, and Beijing National Laboratory for Molecular SciencesPeking University
    • College of Chemistry and Molecular Engineering, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, and Beijing National Laboratory for Molecular SciencesPeking University

DOI: 10.1007/s12274-010-0015-7

Abstract

A tight-binding analytic framework is combined with first-principles calculations to reveal the mechanism underlying the strain effects on electronic structures of graphene and graphene nanoribbons (GNRs). It provides a unified and precise formulation of the strain effects under various circumstances-including the shift of the Fermi (Dirac) points, the change in band gap of armchair GNRs with uniaxial strain in a zigzag pattern and its insensitivity to shear strain, and the variation of the k-range of edge states in zigzag GNRs under uniaxial and shear strains which determine the gap behavior via the spin polarization interaction.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-0015-7/MediaObjects/12274_2010_15_Fig1_HTML.gif

Keywords

Graphene graphene nanoribbons (GNRs) band gap strain first-principles calculations tight-binding model

Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010