Open Access
Research Article

Nano Research

, Volume 3, Issue 7, pp 528-536

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Authors

  • Caroline Chèze
    • Paul-Drude-Institut für Festkörperelektronik
    • Qimonda
  • Lutz Geelhaar
    • Paul-Drude-Institut für Festkörperelektronik
    • Qimonda
  • Oliver Brandt
    • Paul-Drude-Institut für Festkörperelektronik
  • Walter M. Weber
    • NaMLab gGmbH
    • Qimonda
  • Henning Riechert
    • Paul-Drude-Institut für Festkörperelektronik
    • Physics DepartmentAristotle University
  • Steffen Münch
    • Technische PhysikUniversität Würzburg
  • Ralph Rothemund
    • Technische PhysikUniversität Würzburg
  • Stephan Reitzenstein
    • Technische PhysikUniversität Würzburg
  • Alfred Forchel
    • Technische PhysikUniversität Würzburg
  • Thomas Kehagias
    • Physics DepartmentAristotle University
  • Philomela Komninou
    • Physics DepartmentAristotle University
  • George P. Dimitrakopulos
    • Physics DepartmentAristotle University
  • Theodoros Karakostas
    • Physics DepartmentAristotle University

DOI: 10.1007/s12274-010-0013-9

Abstract

GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-010-0013-9/MediaObjects/12274_2010_13_Fig1_HTML.jpg

Keywords

Nanowire nanocolumn molecular beam epitaxy (MBE) photoluminescence stacking faults catalyst

Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010