, Volume 3, Issue 7, pp 528-536,
Open Access This content is freely available online to anyone, anywhere at any time.
Date: 09 Jul 2010

Direct comparison of catalyst-free and catalyst-induced GaN nanowires


GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.