Nano Research

, Volume 3, Issue 6, pp 444–451

Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes

Authors

  • Xinning Ho
    • Department of Materials Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign
  • Lina Ye
    • Department of Materials Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign
    • Department of ChemistryUniversity of Science and Technology of China
    • Department of PhysicsLehigh University
    • Centre for Advanced Materials and NanotechnologyLehigh University
  • Xu Xie
    • Department of Materials Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign
  • Frank Du
    • Department of Materials Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign
  • Simon Dunham
    • Department of Materials Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign
  • Jana Zaumseil
    • Center for Nanoscale MaterialsArgonne National Laboratory
    • Department of Materials Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-Champaign
    • Department of ChemistryUniversity of Illinois at Urbana-Champaign
    • Department of Electrical and Computer Engineering, Mechanical Science and EngineeringUniversity of Illinois at Urbana-Champaign
Open AccessResearch Article

DOI: 10.1007/s12274-010-0004-x

Cite this article as:
Ho, X., Ye, L., Rotkin, S.V. et al. Nano Res. (2010) 3: 444. doi:10.1007/s12274-010-0004-x
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Abstract

We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as-grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of metallic-single-walled nanotube (SWNT) shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to 10 μm.

Keywords

Schottky diodesaligned arrayssingle-walled carbon nanotubes
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Supplementary material

12274_2010_4_MOESM1_ESM.pdf (630 kb)
Supplementary material, approximately 340 KB.

Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010