Nano Research

, Volume 2, Issue 12, pp 931–937

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Authors

  • Joanne W. L. Yim
    • Department of Materials Science and EngineeringUniversity of California
    • Lawrence Berkeley National LaboratoryMaterials Sciences Division
  • Deirdre Chen
    • Department of Materials Science and EngineeringUniversity of California
  • Gregory F. Brown
    • Department of Materials Science and EngineeringUniversity of California
    • Lawrence Berkeley National LaboratoryMaterials Sciences Division
    • Department of Materials Science and EngineeringUniversity of California
    • Lawrence Berkeley National LaboratoryMaterials Sciences Division
Open AccessResearch Article

DOI: 10.1007/s12274-009-9095-7

Abstract

We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.
https://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9095-7/MediaObjects/12274_2009_9095_Fig1_HTML.jpg

Keywords

Aspect ratio doping nanowires zinc selenide zinc telluride

Copyright information

© Tsinghua University Press and Springer Berlin Heidelberg 2009