Research Article

Nano Research

, Volume 2, Issue 12, pp 931-937

Open Access This content is freely available online to anyone, anywhere at any time.

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

  • Joanne W. L. YimAffiliated withDepartment of Materials Science and Engineering, University of CaliforniaLawrence Berkeley National Laboratory, Materials Sciences Division
  • , Deirdre ChenAffiliated withDepartment of Materials Science and Engineering, University of California
  • , Gregory F. BrownAffiliated withDepartment of Materials Science and Engineering, University of CaliforniaLawrence Berkeley National Laboratory, Materials Sciences Division
  • , Junqiao WuAffiliated withDepartment of Materials Science and Engineering, University of CaliforniaLawrence Berkeley National Laboratory, Materials Sciences Division Email author 

Abstract

We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.
http://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9095-7/MediaObjects/12274_2009_9095_Fig1_HTML.jpg

Keywords

Aspect ratio doping nanowires zinc selenide zinc telluride