, Volume 2, Issue 12, pp 931-937,
Open Access This content is freely available online to anyone, anywhere at any time.
Date: 05 Mar 2010

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Abstract

We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.