Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios
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We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.
KeywordsAspect ratio doping nanowires zinc selenide zinc telluride
© Tsinghua University Press and Springer Berlin Heidelberg 2009