Research Article

Nano Research

, Volume 2, Issue 7, pp 553-557

Open Access This content is freely available online to anyone, anywhere at any time.

Bending-induced conductance increase in individual semiconductor nanowires and nanobelts

  • Xiaobing HanAffiliated withState Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University
  • , Guangyin JingAffiliated withState Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University
  • , Xinzheng ZhangAffiliated withState Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University
  • , Renmin MaAffiliated withState Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University
  • , Xuefeng SongAffiliated withState Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University
  • , Jun XuAffiliated withState Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University
  • , Zhimin LiaoAffiliated withState Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University
  • , Ning WangAffiliated withPhysics Department, Hong Kong University of Science and Technology
  • , Dapeng YuAffiliated withState Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University Email author 

Abstract

Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.

http://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9053-4/MediaObjects/12274_2009_9053_Fig1_HTML.jpg

Keywords

ZnO nanowires bending strain piezoresistance conductance enhancement