Bending-induced conductance increase in individual semiconductor nanowires and nanobelts
- First Online:
- Cite this article as:
- Han, X., Jing, G., Zhang, X. et al. Nano Res. (2009) 2: 553. doi:10.1007/s12274-009-9053-4
- 428 Downloads
Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.