Nano Research

, Volume 2, Issue 5, pp 394–399

Thermoelectric properties of p-type PbSe nanowires

  • Wenjie Liang
  • Oded Rabin
  • Allon I. Hochbaum
  • Melissa Fardy
  • Minjuan Zhang
  • Peidong Yang
Open AccessResearch Article

DOI: 10.1007/s12274-009-9039-2

Cite this article as:
Liang, W., Rabin, O., Hochbaum, A.I. et al. Nano Res. (2009) 2: 394. doi:10.1007/s12274-009-9039-2

Abstract

The thermoelectric properties of individual solution-phase synthesized p-type PbSe nanowires have been examined. The nanowires showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the PbSe nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at room temperature.

https://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9039-2/MediaObjects/12274_2009_9039_Fig1_HTML.jpg

Keywords

Nanowirethermoelectricsthermopowerthermal conductivitylead chalcogenide
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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2009

Authors and Affiliations

  • Wenjie Liang
    • 1
  • Oded Rabin
    • 1
  • Allon I. Hochbaum
    • 1
  • Melissa Fardy
    • 1
  • Minjuan Zhang
    • 2
  • Peidong Yang
    • 1
  1. 1.Department of ChemistryUniversity of CaliforniaBerkeleyUSA
  2. 2.Materials Research Department, Toyota Technical CenterToyota Motor Engineering & Manufacturing North America (TEMA) Inc.Ann ArborUSA
  3. 3.Institute of PhysicsChinese Academy of SciencesBeijingChina
  4. 4.Department of Materials Science and Engineering and the Institute for Research in Electronics and Applied PhysicsUniversity of MarylandCollege ParkUSA