Nano Research

, Volume 2, Issue 5, pp 394–399

Thermoelectric properties of p-type PbSe nanowires

Authors

  • Wenjie Liang
    • Department of ChemistryUniversity of California
  • Oded Rabin
    • Department of ChemistryUniversity of California
  • Allon I. Hochbaum
    • Department of ChemistryUniversity of California
  • Melissa Fardy
    • Department of ChemistryUniversity of California
  • Minjuan Zhang
    • Materials Research Department, Toyota Technical CenterToyota Motor Engineering & Manufacturing North America (TEMA) Inc.
    • Department of ChemistryUniversity of California
Open AccessResearch Article

DOI: 10.1007/s12274-009-9039-2

Cite this article as:
Liang, W., Rabin, O., Hochbaum, A.I. et al. Nano Res. (2009) 2: 394. doi:10.1007/s12274-009-9039-2

Abstract

The thermoelectric properties of individual solution-phase synthesized p-type PbSe nanowires have been examined. The nanowires showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the PbSe nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at room temperature.

https://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9039-2/MediaObjects/12274_2009_9039_Fig1_HTML.jpg

Keywords

Nanowirethermoelectricsthermopowerthermal conductivitylead chalcogenide
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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2009