Research Article

Nano Research

, Volume 2, Issue 5, pp 394-399

Open Access This content is freely available online to anyone, anywhere at any time.

Thermoelectric properties of p-type PbSe nanowires

  • Wenjie LiangAffiliated withDepartment of Chemistry, University of California
  • , Oded RabinAffiliated withDepartment of Chemistry, University of California
  • , Allon I. HochbaumAffiliated withDepartment of Chemistry, University of California
  • , Melissa FardyAffiliated withDepartment of Chemistry, University of California
  • , Minjuan ZhangAffiliated withMaterials Research Department, Toyota Technical Center, Toyota Motor Engineering & Manufacturing North America (TEMA) Inc.
  • , Peidong YangAffiliated withDepartment of Chemistry, University of California Email author 

Abstract

The thermoelectric properties of individual solution-phase synthesized p-type PbSe nanowires have been examined. The nanowires showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the PbSe nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at room temperature.

http://static-content.springer.com/image/art%3A10.1007%2Fs12274-009-9039-2/MediaObjects/12274_2009_9039_Fig1_HTML.jpg

Keywords

Nanowire thermoelectrics thermopower thermal conductivity lead chalcogenide