Research Article

Nano Research

, Volume 1, Issue 5, pp 395-402

Open Access This content is freely available online to anyone, anywhere at any time.

Computational model of edge effects in graphene nanoribbon transistors

  • Pei ZhaoAffiliated withDepartment of Electrical and Computer Engineering, University of Florida
  • , Mihir ChoudhuryAffiliated withDepartment of Electrical and Computer Engineering, Rice University
  • , Kartik MohanramAffiliated withDepartment of Electrical and Computer Engineering, Rice University
  • , Jing GuoAffiliated withDepartment of Electrical and Computer Engineering, University of Florida Email author 

Abstract

We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon field-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a significant effect on the quantum capacitance and ballistic I-V characteristics of GNRFETs. For an AGNR with an index of m=3p, the band gap decreases and the ON current increases whereas for an AGNR with an index of m=3p+1, the quantum capacitance increases and the ON current decreases. The effect of edge scattering, which reduces the ON current, is also included in the model.

http://static-content.springer.com/image/art%3A10.1007%2Fs12274-008-8039-y/MediaObjects/12274_2008_8039_Fig1_HTML.jpg

Keywords

Graphene nanoribbon field-effect transistor edge bond relaxation third nearest neighbor interaction edge scattering