, Volume 1, Issue 5, pp 395-402,
Open Access This content is freely available online to anyone, anywhere at any time.
Date: 05 Mar 2010

Computational model of edge effects in graphene nanoribbon transistors

Abstract

We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon field-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a significant effect on the quantum capacitance and ballistic I-V characteristics of GNRFETs. For an AGNR with an index of m=3p, the band gap decreases and the ON current increases whereas for an AGNR with an index of m=3p+1, the quantum capacitance increases and the ON current decreases. The effect of edge scattering, which reduces the ON current, is also included in the model.

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