Review Article

Nano Research

, Volume 1, Issue 4, pp 273-291

Open Access This content is freely available online to anyone, anywhere at any time.

Raman spectroscopy and imaging of graphene

  • Zhenhua NiAffiliated withDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University
  • , Yingying WangAffiliated withDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University
  • , Ting YuAffiliated withDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University
  • , Zexiang ShenAffiliated withDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University Email author 

Abstract

Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review recent results on the Raman spectroscopy and imaging of graphene. We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

http://static-content.springer.com/image/art%3A10.1007%2Fs12274-008-8036-1/MediaObjects/12274_2008_8036_Fig1_HTML.jpg

Keywords

Graphene Raman spectroscopy and imaging substrate effect device application