Abstract
Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 °C, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.
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Supported by National Natural Science Foundation of China (No.60876009) and Natural Science Foundation of Tianjin (No.09JCZDJC16600).
Xie Sheng, born in 1978, male, Dr, associate Prof.
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Xie, S., Feng, Z., Liu, B. et al. DC characteristics of lattice-matched InAlN/AlN/GaN high electron mobility transistors. Trans. Tianjin Univ. 19, 43–46 (2013). https://doi.org/10.1007/s12209-013-1920-0
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DOI: https://doi.org/10.1007/s12209-013-1920-0