Abstract
A modal analysis is conducted for analyzing the absorption profile of high power waveguide photodiodes designed for analog optical link. The excitation of guided modes with large filling factor in the absorber is identified as a limiting factor for the performance of waveguide photodiodes at high optical power, including power handling capability, and bandwidth-efficiency product. A waveguide photodiode design, which spatially separates the input waveguide from the absorber in the lateral direction, is analyzed and experimentally demonstrated to suppress the excitation of mode with large filling factor. Photocurrent>60 mA under − 4 V bias is measured, with 0.80 A/W responsivity. This design illustrates that high power handling capability can be achieved without compromising the bandwidth-efficiency product.
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Dingbo Chen is a graduate student in the Department of Electric and Computer Engineering, University of California at San Diego since 2008. He has been doing research on InP and Silicon based devices, including laser, modulator, and photodetector, which greatly enhance the performance of telecommunications network, His current focus on InGaAs waveguide photodiode with high power, high linearity, and high speed has the potential to push networking applications to next high level.
RuiWang was born in Jilin Province, China. He obtained the Bachelor of Science degree in Department of Microelectronics, Peking University, Beijing, China, and the thesis Master of Applied Science degree on integrated optics in Department of Electrical and Computer Engineering, McMaster University, Canada. Currently he is pursing the Ph.D. degree on photonics in Department of Electrical and Computer Engineering, University of California, San Diego.
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Chen, D., Bloch, J., Wang, R. et al. Absorption density control in waveguide photodiode-analysis, design, and demonstration. Front. Optoelectron. 7, 385–392 (2014). https://doi.org/10.1007/s12200-014-0421-7
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DOI: https://doi.org/10.1007/s12200-014-0421-7