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Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

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Abstract

In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green’s function formalism on an effective mass-Hamiltonian. Both p- and n-type DBRTDs exhibit a negative differential resistance effect, which entails the resonant tunnelling through the hole and electron bound states in the graphene quantum well, respectively. The peak-to-valley ratio of approximately 8 (3) for p-type (n-type) DBRTD with quantum well of 5.1 nm (4.3 nm) at a barrier width of 1.3 nm was achieved for zero bandgap graphene at room temperature.

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Authors and Affiliations

  1. Center for Nanotechnology Research, VIT University, Vellore, 632014, India

    PENCHALAIAH PALLA, GOPI RAJA UPPU, ANITA S ETHIRAJ & J P RAINA

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  1. PENCHALAIAH PALLA
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  2. GOPI RAJA UPPU
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PALLA, P., UPPU, G.R., ETHIRAJ, A.S. et al. Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode. Bull Mater Sci 39, 1441–1451 (2016). https://doi.org/10.1007/s12034-016-1285-9

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