Abstract
Many studies have been conducted on membranes implemented as pH sensors for measuring pH sensitivity; nevertheless, the effect of metal oxide semiconductor field effect transistors was not taken into account. Hence, this study was conducted to measure the sensitivity of the CuS membrane with and without a field effect transistor. The CuS membrane was deposited onto a glass substrate using the spray pyrolysis technique. The sensitivity and linearity in the absence of the field effect transistor were measured to be 22.86 mV/pH and 95.62%, whereas the presence of the field effect showed slightly higher sensitivity and linearity of 24 mV/pH and 98.18%, respectively. The CuS membrane synthesized in the presence of the field effect transistor also showed higher stability because the metal oxide semiconductor was not immersed in a buffer solution. Furthermore, the hysteresis of the CuS membrane, measured for 5 min, yielded a value of 12.8 mV. The structural characteristics of the membrane confirmed the formation of a single, pure CuS phase, whereas the morphological characteristics showed porous agglomerations of square nanocrystals.
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The authors gratefully acknowledge the financial support of the University Sains Malaysia and the RU Top- Down Grant 1001/CINOR/870019.
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Sabah, F.A., Ahmed, N.M., Hassan, Z. et al. Sensitivity of CuS Membrane pH Sensor With and Without MOSFET. JOM 69, 1134–1142 (2017). https://doi.org/10.1007/s11837-016-2165-x
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DOI: https://doi.org/10.1007/s11837-016-2165-x