Optoelectronics Letters

, Volume 9, Issue 3, pp 177-180

First online:

An Al x In1−x As/GaAs heterojunction ultra-thin film solar cell with 20% efficiency

  • K. A. S. M. Ehteshamul HaqueAffiliated withDepartment of Electrical and Electronic Engineering, Islamic University of Technology Board Bazar Email author 

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An ultra-thin film photovoltaic cell, which incorporates an Al x In1−x As/GaAs heterojunction, is simulated using Adept 1D simulation tool, and it is with an energy conversion efficiency of 20.06% (under 1 sun, AM1.5G illumination) for 604 nm cell thickness (excluding the substrate thickness), and optimized layer thickness and doping concentration for each layer of the device. The device has an n-type AlAs window layer (highly doped), an n-type Al x In1−x As emitter layer and a p-type GaAs base layer. Germanium (Ge) substrate is used for the structure. The device parameters are optimized separately for each layer. Based on these optimizations, the ultra-thin film solar cell design is proposed after careful consideration of lattice mismatch between two adjacent layers of the device.