Nano Express

Nanoscale Research Letters

, Volume 5, Issue 6, pp 1079-1084

Open Access This content is freely available online to anyone, anywhere at any time.

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

  • Zhenhua LiAffiliated withArkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas
  • , Jiang WuAffiliated withDepartment of Electrical Engineering, University of Arkansas Email author 
  • , Zhiming M. WangAffiliated withArkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas
  • , Dongsheng FanAffiliated withDepartment of Electrical Engineering, University of Arkansas
  • , Aqiang GuoAffiliated withArkansas Institute For Nanoscale Materials Science and Engineering, University of Arkansas
  • , Shibing LiAffiliated withDepartment of Electrical Engineering, University of Arkansas
  • , Shui-Qing YuAffiliated withDepartment of Electrical Engineering, University of Arkansas
  • , Omar ManasrehAffiliated withArkansas Institute For Nanoscale Materials Science and Engineering, University of ArkansasDepartment of Electrical Engineering, University of Arkansas
  • , Gregory J. SalamoAffiliated withArkansas Institute For Nanoscale Materials Science and Engineering, University of ArkansasDepartment of Electrical Engineering, University of Arkansas

Abstract

The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

Keywords

Photoluminescence Quantum well High-index surfaces Superluminescent diode Atomic force microscopy