Nano Express

Nanoscale Research Letters

, Volume 5, Issue 4, pp 709-713

Open Access This content is freely available online to anyone, anywhere at any time.

Residual Stress Relaxation Induced by Mass Transport Through Interface of the Pd/SrTiO3

  • S. NazarpourAffiliated withMIND-IN2UB, Department of Electronics, Universitat de BarcelonaUB, Department of Electronics, Universitat de Barcelona Email author 
  • , F. AfsharAffiliated withMIND-IN2UB, Department of Electronics, Universitat de BarcelonaUB, Department of Electronics, Universitat de Barcelona
  • , C. ZamaniAffiliated withMIND-IN2UB, Department of Electronics, Universitat de BarcelonaUB, Department of Electronics, Universitat de Barcelona
  • , N. MoghimianAffiliated withMIND-IN2UB, Department of Electronics, Universitat de BarcelonaUB, Department of Electronics, Universitat de Barcelona
  • , A. CireraAffiliated withMIND-IN2UB, Department of Electronics, Universitat de BarcelonaUB, Department of Electronics, Universitat de Barcelona

Abstract

Metal interconnections having a small cross-section and short length can be subjected to very large mass transport due to the passing of high current densities. As a result, nonlinear diffusion and electromigration effects which may result in device failure and electrical instabilities may be manifested. Various thicknesses of Pd were deposited over SrTiO3 substrate. Residual stress of the deposited film was evaluated by measuring the variation of d-spacing versus sin2ψ through conventional X-ray diffraction method. It has been found that the lattice misfit within film and substrate might be relaxed because of mass transport. Besides, the relation between residual intrinsic stress and oxygen diffusion through deposited film has been expressed. Consequently, appearance of oxide intermediate layer may adjust interfacial characteristics and suppress electrical conductivity by increasing electron scattering through metallic films.

Keywords

Mass transport Residual stress Interfacial properties Relaxation process